All MOSFET. BSH105 Datasheet

 

BSH105 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSH105
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.57 V
   |Id|ⓘ - Maximum Drain Current: 1.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO236AB

 BSH105 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSH105 Datasheet (PDF)

 ..1. Size:110K  philips
bsh105 3.pdf

BSH105
BSH105

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancem

 ..2. Size:225K  nxp
bsh105.pdf

BSH105
BSH105

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..3. Size:35K  tysemi
bsh105.pdf

BSH105
BSH105

Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancement mode, PIN DESCRIPTI

 ..4. Size:1517K  kexin
bsh105.pdf

BSH105
BSH105

SMD Type MOSFETN-Channel MOSFETBSH105 (KSH105)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.05 A (VGS = 10V)1 2 RDS(ON) 200m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 250m (VGS = 2.5V)1.9+0.1-0.1 RDS(ON) 300m (VGS = 1.8V)D1. Gate2. Source3. DrainGS Absolute Maximum R

 9.1. Size:116K  philips
bsh107 3.pdf

BSH105
BSH105

Philips Semiconductors Product specification N-channel enhancement mode BSH107 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.75 A Subminiature surface mountpackage RDS(ON) 90 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT457N-channel, enhancem

 9.2. Size:110K  philips
bsh106 3.pdf

BSH105
BSH105

Philips Semiconductors Product specification N-channel enhancement mode BSH106 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT363N-channel, enhance

 9.3. Size:78K  philips
bsh102 2.pdf

BSH105
BSH105

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH102N-channel enhancement modeMOS transistor1997 Dec 08Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH102MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

 9.4. Size:51K  philips
bsh104 1.pdf

BSH105
BSH105

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSH104N-channel enhancement modeMOS transistor1997 Nov 26Objective specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationN-channel enhancement modeBSH104MOS transistorFEATURES PINNING High-speed switchingPIN SYMBOL DESCRIPTION No secondary breakdown1 g ga

 9.5. Size:318K  philips
bsh108-02.pdf

BSH105
BSH105

BSH108N-channel enhancement mode field-effect transistorRev. 02 25 October 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount p

 9.6. Size:78K  philips
bsh103 4.pdf

BSH105
BSH105

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH103N-channel enhancement modeMOS transistor1998 Feb 11Product specificationSupersedes data of 1998 Jan 30File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH103MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

 9.7. Size:643K  philips
bsh101 3.pdf

BSH105
BSH105

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH101N-channel enhancement modeMOS transistor2000 Jul 19Product specicationSupersedes data of 1997 Nov 28File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH101MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO

 9.8. Size:193K  nxp
bsh103.pdf

BSH105
BSH105

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.9. Size:414K  nxp
bsh108.pdf

BSH105
BSH105

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.10. Size:201K  tysemi
bsh108.pdf

BSH105
BSH105

Product specificationBSH108N-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistor1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fa

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