BSH105 MOSFET. Datasheet pdf. Equivalent
Type Designator: BSH105
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.57 V
|Id|ⓘ - Maximum Drain Current: 1.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO236AB
BSH105 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSH105 Datasheet (PDF)
bsh105 3.pdf
Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancem
bsh105.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsh105.pdf
Product specification N-channel enhancement mode BSH105 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT23N-channel, enhancement mode, PIN DESCRIPTI
bsh105.pdf
SMD Type MOSFETN-Channel MOSFETBSH105 (KSH105)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.05 A (VGS = 10V)1 2 RDS(ON) 200m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 250m (VGS = 2.5V)1.9+0.1-0.1 RDS(ON) 300m (VGS = 1.8V)D1. Gate2. Source3. DrainGS Absolute Maximum R
bsh107 3.pdf
Philips Semiconductors Product specification N-channel enhancement mode BSH107 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.75 A Subminiature surface mountpackage RDS(ON) 90 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT457N-channel, enhancem
bsh106 3.pdf
Philips Semiconductors Product specification N-channel enhancement mode BSH106 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d VDS = 20 V Fast switching Logic level compatible ID = 1.05 A Subminiature surface mountpackage RDS(ON) 250 m (VGS = 2.5 V)gVGS(TO) 0.4 VsGENERAL DESCRIPTION PINNING SOT363N-channel, enhance
bsh102 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH102N-channel enhancement modeMOS transistor1997 Dec 08Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH102MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO
bsh104 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSH104N-channel enhancement modeMOS transistor1997 Nov 26Objective specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationN-channel enhancement modeBSH104MOS transistorFEATURES PINNING High-speed switchingPIN SYMBOL DESCRIPTION No secondary breakdown1 g ga
bsh108-02.pdf
BSH108N-channel enhancement mode field-effect transistorRev. 02 25 October 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount p
bsh103 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH103N-channel enhancement modeMOS transistor1998 Feb 11Product specificationSupersedes data of 1998 Jan 30File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH103MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO
bsh101 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH101N-channel enhancement modeMOS transistor2000 Jul 19Product specicationSupersedes data of 1997 Nov 28File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement modeBSH101MOS transistorFEATURES PINNING - SOT23 Very low thresholdPIN SYMBOL DESCRIPTIO
bsh103.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsh108.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsh108.pdf
Product specificationBSH108N-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistorN-channel enhancement mode field-effect transistor1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH108 in SOT23.2. Features TrenchMOS technology Very fa
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