BUK662R7-55C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK662R7-55C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 306 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de BUK662R7-55C MOSFET
- Selecciónⓘ de transistores por parámetros
BUK662R7-55C datasheet
..1. Size:180K philips
buk662r7-55c.pdf 
BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
..2. Size:912K nxp
buk662r7-55c.pdf
BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
7.1. Size:353K philips
buk662r5-30c.pdf
BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
7.2. Size:937K nxp
buk662r4-40c.pdf
BUK662R4-40C N-channel TrenchMOS FET Rev. 2 2 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
9.1. Size:201K philips
buk663r5-30c.pdf
BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.2. Size:371K philips
buk661r9-40c.pdf
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.3. Size:198K philips
buk6610-75c.pdf
BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
9.4. Size:219K philips
buk663r5-55c.pdf
BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.5. Size:395K philips
buk661r8-30c.pdf
BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 02 28 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.6. Size:358K philips
buk6607-75c.pdf
BUK6607-75C N-channel TrenchMOS FET Rev. 2 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
9.7. Size:360K philips
buk663r7-75c.pdf
BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut
9.8. Size:216K philips
buk664r4-55c.pdf
BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat
9.9. Size:374K philips
buk663r2-40c.pdf
BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.10. Size:355K philips
buk6607-55c.pdf
BUK6607-55C N-channel TrenchMOS logic and standard level FET Rev. 1 14 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u
9.11. Size:769K nxp
buk663r5-30c.pdf
BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.12. Size:943K nxp
buk661r9-40c.pdf
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.13. Size:767K nxp
buk6610-75c.pdf
BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
9.14. Size:750K nxp
buk661r8-30c.pdf
BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.15. Size:929K nxp
buk6607-75c.pdf
BUK6607-75C N-channel TrenchMOS FET Rev. 2 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
9.16. Size:932K nxp
buk663r7-75c.pdf
BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut
9.17. Size:772K nxp
buk664r4-55c.pdf
BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat
9.18. Size:946K nxp
buk663r2-40c.pdf
BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.19. Size:927K nxp
buk664r6-40c.pdf
BUK664R6-40C N-channel TrenchMOS intermediate level FET Rev. 2 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.20. Size:926K nxp
buk6607-55c.pdf
BUK6607-55C N-channel TrenchMOS logic and standard level FET Rev. 1 14 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u
Otros transistores... BUK6607-55C
, BUK6607-75C
, BUK6610-75C
, BUK661R6-30C
, BUK661R8-30C
, BUK661R9-40C
, BUK662R4-40C
, BUK662R5-30C
, P55NF06
, BUK663R2-40C
, BUK663R5-30C
, BUK663R5-55C
, BUK663R7-75C
, BUK664R4-55C
, BUK664R6-40C
, BUK664R8-75C
, BUK6C1R5-40C
.
History: BUK7K8R7-40E
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