Справочник MOSFET. BUK662R7-55C

 

BUK662R7-55C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK662R7-55C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для BUK662R7-55C

 

 

BUK662R7-55C Datasheet (PDF)

 ..1. Size:180K  philips
buk662r7-55c.pdf

BUK662R7-55C
BUK662R7-55C

BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 ..2. Size:912K  nxp
buk662r7-55c.pdf

BUK662R7-55C
BUK662R7-55C

BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.1. Size:353K  philips
buk662r5-30c.pdf

BUK662R7-55C
BUK662R7-55C

BUK662R5-30CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.2. Size:937K  nxp
buk662r4-40c.pdf

BUK662R7-55C
BUK662R7-55C

BUK662R4-40CN-channel TrenchMOS FETRev. 2 2 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 9.1. Size:201K  philips
buk663r5-30c.pdf

BUK662R7-55C
BUK662R7-55C

BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.2. Size:371K  philips
buk661r9-40c.pdf

BUK662R7-55C
BUK662R7-55C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.3. Size:198K  philips
buk6610-75c.pdf

BUK662R7-55C
BUK662R7-55C

BUK6610-75CN-channel TrenchMOS FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 9.4. Size:219K  philips
buk663r5-55c.pdf

BUK662R7-55C
BUK662R7-55C

BUK663R5-55CN-channel TrenchMOS intermediate level FETRev. 2 23 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.5. Size:395K  philips
buk661r8-30c.pdf

BUK662R7-55C
BUK662R7-55C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 02 28 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.6. Size:358K  philips
buk6607-75c.pdf

BUK662R7-55C
BUK662R7-55C

BUK6607-75CN-channel TrenchMOS FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 9.7. Size:360K  philips
buk663r7-75c.pdf

BUK662R7-55C
BUK662R7-55C

BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

 9.8. Size:216K  philips
buk664r4-55c.pdf

BUK662R7-55C
BUK662R7-55C

BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat

 9.9. Size:374K  philips
buk663r2-40c.pdf

BUK662R7-55C
BUK662R7-55C

BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.10. Size:355K  philips
buk6607-55c.pdf

BUK662R7-55C
BUK662R7-55C

BUK6607-55CN-channel TrenchMOS logic and standard level FETRev. 1 14 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u

 9.11. Size:769K  nxp
buk663r5-30c.pdf

BUK662R7-55C
BUK662R7-55C

BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.12. Size:943K  nxp
buk661r9-40c.pdf

BUK662R7-55C
BUK662R7-55C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.13. Size:767K  nxp
buk6610-75c.pdf

BUK662R7-55C
BUK662R7-55C

BUK6610-75CN-channel TrenchMOS FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 9.14. Size:750K  nxp
buk661r8-30c.pdf

BUK662R7-55C
BUK662R7-55C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 2.1 18 August 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.15. Size:929K  nxp
buk6607-75c.pdf

BUK662R7-55C
BUK662R7-55C

BUK6607-75CN-channel TrenchMOS FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 9.16. Size:932K  nxp
buk663r7-75c.pdf

BUK662R7-55C
BUK662R7-55C

BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

 9.17. Size:772K  nxp
buk664r4-55c.pdf

BUK662R7-55C
BUK662R7-55C

BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat

 9.18. Size:946K  nxp
buk663r2-40c.pdf

BUK662R7-55C
BUK662R7-55C

BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.19. Size:927K  nxp
buk664r6-40c.pdf

BUK662R7-55C
BUK662R7-55C

BUK664R6-40CN-channel TrenchMOS intermediate level FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.20. Size:926K  nxp
buk6607-55c.pdf

BUK662R7-55C
BUK662R7-55C

BUK6607-55CN-channel TrenchMOS logic and standard level FETRev. 1 14 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u

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