BUK662R7-55C MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK662R7-55C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 306 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 258 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: D2PAK
BUK662R7-55C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK662R7-55C Datasheet (PDF)
buk662r7-55c.pdf
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buk662r7-55c.pdf
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buk663r5-30c.pdf
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buk661r9-40c.pdf
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buk6610-75c.pdf
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buk663r5-55c.pdf
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buk663r7-75c.pdf
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buk663r2-40c.pdf
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buk6607-55c.pdf
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buk663r5-30c.pdf
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buk661r9-40c.pdf
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buk6610-75c.pdf
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buk6607-75c.pdf
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buk663r7-75c.pdf
BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut
buk664r4-55c.pdf
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buk663r2-40c.pdf
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buk6607-55c.pdf
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