BUK663R2-40C Todos los transistores

 

BUK663R2-40C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK663R2-40C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 204 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: D2PAK

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BUK663R2-40C datasheet

 ..1. Size:374K  philips
 buk663r2-40c.pdf pdf_icon

BUK663R2-40C

BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 ..2. Size:946K  nxp
 buk663r2-40c.pdf pdf_icon

BUK663R2-40C

BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.1. Size:201K  philips
 buk663r5-30c.pdf pdf_icon

BUK663R2-40C

BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:219K  philips
 buk663r5-55c.pdf pdf_icon

BUK663R2-40C

BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

MOSTRAR MÁS

Otros transistores... BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , 8205A , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C .

 

 

 

 

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