BUK663R2-40C - аналоги и даташиты транзистора

 

BUK663R2-40C - Даташиты. Аналоги. Основные параметры


   Наименование производителя: BUK663R2-40C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 204 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK663R2-40C

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK663R2-40C Datasheet (PDF)

 ..1. Size:374K  philips
 buk663r2-40c.pdf pdf_icon

BUK663R2-40C

BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 ..2. Size:946K  nxp
 buk663r2-40c.pdf pdf_icon

BUK663R2-40C

BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.1. Size:201K  philips
 buk663r5-30c.pdf pdf_icon

BUK663R2-40C

BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:219K  philips
 buk663r5-55c.pdf pdf_icon

BUK663R2-40C

BUK663R5-55CN-channel TrenchMOS intermediate level FETRev. 2 23 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , IRF630 , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C .

History: PSMN027-100BS | MMDF3P03HDR | IPA60R160C6 | TPB65R160C | 2SJ208 | MS4N60C | SVSP11N70FJHD2

 

 
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