All MOSFET. BUK663R2-40C Datasheet

 

BUK663R2-40C Datasheet and Replacement


   Type Designator: BUK663R2-40C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 204 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: D2PAK
 

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BUK663R2-40C Datasheet (PDF)

 ..1. Size:374K  philips
 buk663r2-40c.pdf pdf_icon

BUK663R2-40C

BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 ..2. Size:946K  nxp
 buk663r2-40c.pdf pdf_icon

BUK663R2-40C

BUK663R2-40CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.1. Size:201K  philips
 buk663r5-30c.pdf pdf_icon

BUK663R2-40C

BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:219K  philips
 buk663r5-55c.pdf pdf_icon

BUK663R2-40C

BUK663R5-55CN-channel TrenchMOS intermediate level FETRev. 2 23 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

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Datasheet: BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , 2SK3878 , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C .

History: NCEP0178 | CS2N60U | AOT3N100 | BUK652R6-40C | AOT288L | PSMN1R3-30YL | 2SK3489

Keywords - BUK663R2-40C MOSFET datasheet

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