BUK6C1R5-40C Todos los transistores

 

BUK6C1R5-40C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK6C1R5-40C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Id|ⓘ - Corriente continua de drenaje: 319 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm

Encapsulados: D2PAK

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BUK6C1R5-40C datasheet

 9.1. Size:185K  nxp
 buk6c2r1-55c.pdf pdf_icon

BUK6C1R5-40C

BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au

 9.2. Size:188K  nxp
 buk6c3r3-75c.pdf pdf_icon

BUK6C1R5-40C

BUK6C3R3-75C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au

Otros transistores... BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , STP75NF75 , BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC .

 

 

 

 

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