BUK6C1R5-40C Datasheet and Replacement
Type Designator: BUK6C1R5-40C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 319 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: D2PAK
BUK6C1R5-40C substitution
BUK6C1R5-40C Datasheet (PDF)
buk6c2r1-55c.pdf

BUK6C2R1-55CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
buk6c3r3-75c.pdf

BUK6C3R3-75CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
Datasheet: BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , 12N60 , BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC .
History: 2SK3134 | BUK7626-100B | BUK7510-100B | MDIB6N70CTH | PSMN2R0-60ES | JCS4N70F | BLF7G20LS-90P
Keywords - BUK6C1R5-40C MOSFET datasheet
BUK6C1R5-40C cross reference
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BUK6C1R5-40C substitution
BUK6C1R5-40C replacement
History: 2SK3134 | BUK7626-100B | BUK7510-100B | MDIB6N70CTH | PSMN2R0-60ES | JCS4N70F | BLF7G20LS-90P



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