40600 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 40600
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 0.05 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 5.5 pF
Resistencia entre drenaje y fuente RDS(on): 200 Ohm
Paquete / Cubierta: TO72
Búsqueda de reemplazo de MOSFET 40600
40600 Datasheet (PDF)
nss40600cf8-d.pdf
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NSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
nss40600cf8t1g.pdf
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NSS40600CF8T1G,SNSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat) http://onsemi.comtransistors are miniature surface mount devices featuring ultra low-40 VOLTS, 7.0 AMPSsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationsPNP LOW VCE(
Otros transistores... 3SK87AL , 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , CEP83A3 , 40601 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 .
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