40600 Todos los transistores

 

40600 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 40600

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.4 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 5.5 pF

Resistencia drenaje-fuente RDS(on): 200 Ohm

Empaquetado / Estuche: TO72

Búsqueda de reemplazo de MOSFET 40600

 

40600 Datasheet (PDF)

1.1. nss40600cf8-d.pdf Size:128K _onsemi

40600
40600

NSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http://onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor

1.2. nss40600cf8t1g.pdf Size:103K _onsemi

40600
40600

NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) http://onsemi.com transistors are miniature surface mount devices featuring ultra low -40 VOLTS, 7.0 AMPS saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications PNP LOW VCE(

 

Otros transistores... 3SK87AL , 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , IRFP260M , 40601 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 .

 

 
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