All MOSFET. 40600 Datasheet

 

40600 MOSFET. Datasheet pdf. Equivalent

Type Designator: 40600

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 5.5 pF

Maximum Drain-Source On-State Resistance (Rds): 200 Ohm

Package: TO72

40600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

40600 Datasheet (PDF)

 0.1. Size:128K  onsemi
 nss40600cf8-d.pdf

40600 40600

NSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 0.2. Size:103K  onsemi
 nss40600cf8t1g.pdf

40600 40600

NSS40600CF8T1G,SNSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat) http://onsemi.comtransistors are miniature surface mount devices featuring ultra low-40 VOLTS, 7.0 AMPSsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationsPNP LOW VCE(

Datasheet: 3SK87AL , 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , IRF460 , 40601 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 .

 

 
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