40600 Datasheet. Specs and Replacement

Type Designator: 40600  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 5.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: TO72

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40600 substitution

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40600 datasheet

 0.1. Size:128K  onsemi
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40600

NSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor... See More ⇒

 0.2. Size:103K  onsemi
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40600

NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low -40 VOLTS, 7.0 AMPS saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications PNP LOW VCE(... See More ⇒

Detailed specifications: 3SK87AL, 3SK88, 3SK88K, 3SK88L, 3SK90, 3SK95, 3SK96, 3UT40, AO4468, 40601, 40602, 40603, 40604, 40673, 40819, 40820, 40821

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.