All MOSFET. 40600 Datasheet

 

40600 MOSFET. Datasheet pdf. Equivalent

Type Designator: 40600

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 5.5 pF

Maximum Drain-Source On-State Resistance (Rds): 200 Ohm

Package: TO72

40600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

40600 Datasheet (PDF)

0.1. nss40600cf8-d.pdf Size:128K _onsemi

40600
40600

NSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http://onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor

0.2. nss40600cf8t1g.pdf Size:103K _onsemi

40600
40600

NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) http://onsemi.com transistors are miniature surface mount devices featuring ultra low -40 VOLTS, 7.0 AMPS saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications PNP LOW VCE(

 

Datasheet: 3SK87AL , 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , IRFP260M , 40601 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 .

 

 
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