40600 Datasheet and Replacement
Type Designator: 40600
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 5.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: TO72
40600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
40600 Datasheet (PDF)
nss40600cf8-d.pdf
NSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor... See More ⇒
nss40600cf8t1g.pdf
NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low -40 VOLTS, 7.0 AMPS saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications PNP LOW VCE(... See More ⇒
Datasheet: 3SK87AL , 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , IRFZ46N , 40601 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 .
Keywords - 40600 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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