All MOSFET. 40600 Datasheet

 

40600 Datasheet and Replacement


   Type Designator: 40600
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 5.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: TO72
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40600 Datasheet (PDF)

 0.1. Size:128K  onsemi
 nss40600cf8-d.pdf pdf_icon

40600

NSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

 0.2. Size:103K  onsemi
 nss40600cf8t1g.pdf pdf_icon

40600

NSS40600CF8T1G,SNSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat) http://onsemi.comtransistors are miniature surface mount devices featuring ultra low-40 VOLTS, 7.0 AMPSsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationsPNP LOW VCE(

Datasheet: 3SK87AL , 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , 2SK3918 , 40601 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 .

History: FDMS9620S | AM2314NE | WMM11N80M3 | IRFI7536G

Keywords - 40600 MOSFET datasheet

 40600 cross reference
 40600 equivalent finder
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