40600 MOSFET. Datasheet pdf. Equivalent
Type Designator: 40600
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 5.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: TO72
40600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
40600 Datasheet (PDF)
nss40600cf8-d.pdf
NSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
nss40600cf8t1g.pdf
NSS40600CF8T1G,SNSS40600CF8T1G40 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat) http://onsemi.comtransistors are miniature surface mount devices featuring ultra low-40 VOLTS, 7.0 AMPSsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationsPNP LOW VCE(
Datasheet: 3SK87AL , 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , STP65NF06 , 40601 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 .
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