40601 Todos los transistores

 

40601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 40601
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.4 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 8 V
   Corriente continua de drenaje |Id|: 0.05 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Conductancia de drenaje-sustrato (Cd): 5.5 pF
   Resistencia entre drenaje y fuente RDS(on): 200 Ohm
   Paquete / Cubierta: TO72

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40601 Datasheet (PDF)

 0.1. Size:161K  onsemi
nss40601cf8t1g.pdf

40601 40601

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 0.2. Size:88K  onsemi
nss40601cf8-d.pdf

40601 40601

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

Otros transistores... 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , 40600 , SPW47N60C3 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 , 40822 .

 

 
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