All MOSFET. 40601 Datasheet

 

40601 MOSFET. Datasheet pdf. Equivalent

Type Designator: 40601

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 5.5 pF

Maximum Drain-Source On-State Resistance (Rds): 200 Ohm

Package: TO72

40601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

40601 Datasheet (PDF)

0.1. nss40601cf8t1g.pdf Size:88K _onsemi

40601
40601

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

0.2. nss40601cf8-d.pdf Size:88K _onsemi

40601
40601

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 

Datasheet: 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , 40600 , BUZ90A , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 , 40822 .

 

 
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