All MOSFET. 40601 Datasheet

 

40601 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 40601
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.4 W
   Maximum Drain-Source Voltage |Vds|: 20 V
   Maximum Gate-Source Voltage |Vgs|: 8 V
   Maximum Drain Current |Id|: 0.05 A
   Maximum Junction Temperature (Tj): 175 °C
   Drain-Source Capacitance (Cd): 5.5 pF
   Maximum Drain-Source On-State Resistance (Rds): 200 Ohm
   Package: TO72

 40601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

40601 Datasheet (PDF)

 0.1. Size:88K  onsemi
nss40601cf8-d.pdf

40601
40601

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 0.2. Size:161K  onsemi
nss40601cf8t1g.pdf

40601
40601

NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

Datasheet: 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , 40600 , IRFP150N , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 , 40822 .

 

 
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