40601 Specs and Replacement
Type Designator: 40601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 5.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: TO72
40601 substitution
40601 datasheet
nss40601cf8-d.pdf
NSS40601CF8T1G 40 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa... See More ⇒
nss40601cf8t1g.pdf
NSS40601CF8T1G 40 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa... See More ⇒
Detailed specifications: 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , 40600 , IRF830 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 , 40822 .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
