40601 MOSFET. Datasheet pdf. Equivalent
Type Designator: 40601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.4 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 175 °C
Drain-Source Capacitance (Cd): 5.5 pF
Maximum Drain-Source On-State Resistance (Rds): 200 Ohm
Package: TO72
40601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
40601 Datasheet (PDF)
nss40601cf8t1g.pdf
NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
nss40601cf8-d.pdf
NSS40601CF8T1G40 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
Datasheet: 3SK88 , 3SK88K , 3SK88L , 3SK90 , 3SK95 , 3SK96 , 3UT40 , 40600 , SPW47N60C3 , 40602 , 40603 , 40604 , 40673 , 40819 , 40820 , 40821 , 40822 .
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