BUK7540-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK7540-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 138 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 37 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO220AB

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BUK7540-100A Datasheet (PDF)

..1. Size:227K philips
buk7540-100a.pdf

BUK7540-100AN-channel TrenchMOS standard level FETRev. 2 20 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

..2. Size:87K philips
buk7540-100a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7540-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITStandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 100 Vtrench technology which features ID Drain current (DC) 37 Avery low on-state res

8.1. Size:273K philips
buk754r3-75c buk7e4r3-75c.pdf

BUK754R3-75C; BUK7E4R3-75CN-channel TrenchMOS standard level FETRev. 01 10 August 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar

8.2. Size:101K philips
buk754r0-55b buk764r0-55b.pdf

BUK754R0-55B; BUK764R0-55BN-channel TrenchMOS standard level FETRev. 04 4 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

8.3. Size:297K philips
buk754r3-40b buk764r3-40b.pdf

BUK75/764R3-40BTrenchMOS standard level FETRev. 01 09 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK754R3-40B in SOT78 (TO-220AB)BUK764R3-40B in SOT404 (D2-PAK).1.2 Features Very low on

8.4. Size:210K nxp
buk754r7-60e.pdf

BUK754R7-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

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