BUK7540-100A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK7540-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7540-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220AB

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BUK7540-100A datasheet

..1. Size:227K philips
buk7540-100a.pdf pdf_icon

BUK7540-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

..2. Size:87K philips
buk7540-100a 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7540-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT Standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V trench technology which features ID Drain current (DC) 37 A very low on-state res

8.1. Size:273K philips
buk754r3-75c buk7e4r3-75c.pdf pdf_icon

BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar

8.2. Size:101K philips
buk754r0-55b buk764r0-55b.pdf pdf_icon

BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

Otros transistores... BUK7528-100A, BUK7528-55A, BUK752R3-40C, BUK752R7-30B, BUK7535-100A, BUK7535-55A, BUK753R1-40B, BUK753R4-30B, 60N06, BUK754R0-40C, BUK754R0-55B, BUK754R3-40B, BUK754R3-75C, BUK755R2-40B, BUK7575-100A, BUK7575-55A, BUK7604-40A

History: ECH8693R

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