All MOSFET. BUK7540-100A Datasheet

 

BUK7540-100A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK7540-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO220AB

 BUK7540-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7540-100A Datasheet (PDF)

 ..1. Size:227K  philips
buk7540-100a.pdf

BUK7540-100A
BUK7540-100A

BUK7540-100AN-channel TrenchMOS standard level FETRev. 2 20 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

 ..2. Size:87K  philips
buk7540-100a 1.pdf

BUK7540-100A
BUK7540-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK7540-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITStandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 100 Vtrench technology which features ID Drain current (DC) 37 Avery low on-state res

 8.1. Size:273K  philips
buk754r3-75c buk7e4r3-75c.pdf

BUK7540-100A
BUK7540-100A

BUK754R3-75C; BUK7E4R3-75CN-channel TrenchMOS standard level FETRev. 01 10 August 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar

 8.2. Size:101K  philips
buk754r0-55b buk764r0-55b.pdf

BUK7540-100A
BUK7540-100A

BUK754R0-55B; BUK764R0-55BN-channel TrenchMOS standard level FETRev. 04 4 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

 8.3. Size:297K  philips
buk754r3-40b buk764r3-40b.pdf

BUK7540-100A
BUK7540-100A

BUK75/764R3-40BTrenchMOS standard level FETRev. 01 09 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK754R3-40B in SOT78 (TO-220AB)BUK764R3-40B in SOT404 (D2-PAK).1.2 Features Very low on

 8.4. Size:210K  nxp
buk754r7-60e.pdf

BUK7540-100A
BUK7540-100A

BUK754R7-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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