BUK7540-100A. Аналоги и основные параметры

Наименование производителя: BUK7540-100A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 138 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 37 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm

Тип корпуса: TO220AB

Аналог (замена) для BUK7540-100A

- подборⓘ MOSFET транзистора по параметрам

 

BUK7540-100A даташит

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buk7540-100a.pdfpdf_icon

BUK7540-100A

BUK7540-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

 ..2. Size:87K  philips
buk7540-100a 1.pdfpdf_icon

BUK7540-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK7540-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT Standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V trench technology which features ID Drain current (DC) 37 A very low on-state res

 8.1. Size:273K  philips
buk754r3-75c buk7e4r3-75c.pdfpdf_icon

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BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar

 8.2. Size:101K  philips
buk754r0-55b buk764r0-55b.pdfpdf_icon

BUK7540-100A

BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

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