BUK7540-100A. Аналоги и основные параметры
Наименование производителя: BUK7540-100A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 138 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 37 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: TO220AB
Аналог (замена) для BUK7540-100A
- подборⓘ MOSFET транзистора по параметрам
BUK7540-100A даташит
buk7540-100a.pdf
BUK7540-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F
buk7540-100a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7540-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT Standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V trench technology which features ID Drain current (DC) 37 A very low on-state res
buk754r3-75c buk7e4r3-75c.pdf
BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standar
buk754r0-55b buk764r0-55b.pdf
BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l
Другие IGBT... BUK7528-100A, BUK7528-55A, BUK752R3-40C, BUK752R7-30B, BUK7535-100A, BUK7535-55A, BUK753R1-40B, BUK753R4-30B, 60N06, BUK754R0-40C, BUK754R0-55B, BUK754R3-40B, BUK754R3-75C, BUK755R2-40B, BUK7575-100A, BUK7575-55A, BUK7604-40A
History: TSM3N90CI
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