BUK7608-40B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7608-40B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 157 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de BUK7608-40B MOSFET
BUK7608-40B Datasheet (PDF)
buk7608-40b.pdf

BUK7608-40BN-channel TrenchMOS standard level FETRev. 04 24 September 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1
buk7508 buk7608-55a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec
buk7608-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the devi
buk7608-55a.pdf

BUK7608-55AN-channel TrenchMOS standard level FETRev. 03 14 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe
Otros transistores... BUK7575-100A , BUK7575-55A , BUK7604-40A , BUK7606-55A , BUK7606-55B , BUK7606-75B , BUK7607-30B , BUK7607-55B , IRFP460 , BUK7608-55A , BUK7609-55A , BUK7609-75A , BUK7610-100B , BUK7610-55AL , BUK7611-55A , BUK7611-55B , BUK7613-75B .
History: INJ0011AU1 | 2N3823 | AP9987GH-HF | SVF18N65T | UF630G-TF1-T | AP25N10GJ-HF | 2SK2415
History: INJ0011AU1 | 2N3823 | AP9987GH-HF | SVF18N65T | UF630G-TF1-T | AP25N10GJ-HF | 2SK2415



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