BUK7608-40B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7608-40B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 157 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 36 nC
Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET BUK7608-40B
BUK7608-40B Datasheet (PDF)
buk7608-40b.pdf
BUK7608-40BN-channel TrenchMOS standard level FETRev. 04 24 September 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1
buk7508 buk7608-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec
buk7608-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the devi
buk7608-55a.pdf
BUK7608-55AN-channel TrenchMOS standard level FETRev. 03 14 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe
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