BUK7608-40B Todos los transistores

 

BUK7608-40B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK7608-40B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 157 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 36 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: D2PAK
 

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BUK7608-40B Datasheet (PDF)

 ..1. Size:702K  nxp
 buk7608-40b.pdf pdf_icon

BUK7608-40B

BUK7608-40BN-channel TrenchMOS standard level FETRev. 04 24 September 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

 6.1. Size:68K  philips
 buk7508 buk7608-55a 1.pdf pdf_icon

BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec

 6.2. Size:54K  philips
 buk7608-55 2.pdf pdf_icon

BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the devi

 6.3. Size:785K  nxp
 buk7608-55a.pdf pdf_icon

BUK7608-40B

BUK7608-55AN-channel TrenchMOS standard level FETRev. 03 14 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

MOSTRAR MÁS

Otros transistores... BUK7575-100A , BUK7575-55A , BUK7604-40A , BUK7606-55A , BUK7606-55B , BUK7606-75B , BUK7607-30B , BUK7607-55B , IRFP460 , BUK7608-55A , BUK7609-55A , BUK7609-75A , BUK7610-100B , BUK7610-55AL , BUK7611-55A , BUK7611-55B , BUK7613-75B .

History: MDIS1903TH | STW40N95K5 | APM4550K

 

 
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