BUK7608-40B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7608-40B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 157 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: D2PAK

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BUK7608-40B datasheet

 ..1. Size:702K  nxp
 buk7608-40b.pdf pdf_icon

BUK7608-40B

BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1

 6.1. Size:68K  philips
 buk7508 buk7608-55a 1.pdf pdf_icon

BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using trench tec

 6.2. Size:54K  philips
 buk7608-55 2.pdf pdf_icon

BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the devi

 6.3. Size:785K  nxp
 buk7608-55a.pdf pdf_icon

BUK7608-40B

BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe

MOSTRAR MÁS

Otros transistores... BUK7575-100A, BUK7575-55A, BUK7604-40A, BUK7606-55A, BUK7606-55B, BUK7606-75B, BUK7607-30B, BUK7607-55B, IRFP460, BUK7608-55A, BUK7609-55A, BUK7609-75A, BUK7610-100B, BUK7610-55AL, BUK7611-55A, BUK7611-55B, BUK7613-75B