BUK7608-40B MOSFET Datasheet: N-Ch, 40V, 75A. Full specification with pinout and replacement list

BUK7608-40B Specs and Replacement

   Type Designator: BUK7608-40B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 157 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: D2PAK

BUK7608-40B substitution

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BUK7608-40B datasheet

..1. Size:702K nxp
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BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1... See More ⇒

6.1. Size:68K philips
buk7508 buk7608-55a 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using trench tec... See More ⇒

6.2. Size:54K philips
buk7608-55 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the devi... See More ⇒

6.3. Size:785K nxp
buk7608-55a.pdf pdf_icon

BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒

Detailed specifications: BUK7575-100A , BUK7575-55A , BUK7604-40A , BUK7606-55A , BUK7606-55B , BUK7606-75B , BUK7607-30B , BUK7607-55B , IRF640 , BUK7608-55A , BUK7609-55A , BUK7609-75A , BUK7610-100B , BUK7610-55AL , BUK7611-55A , BUK7611-55B , BUK7613-75B .