All MOSFET. BUK7608-40B Datasheet

 

BUK7608-40B MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7608-40B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 157 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 36 nC

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: D2PAK

BUK7608-40B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7608-40B Datasheet (PDF)

6.1. buk7608-55 2.pdf Size:54K _philips

BUK7608-40B
BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A ’trench’ technology the devi

6.2. buk7508 buk7608-55a 1.pdf Size:68K _philips

BUK7608-40B
BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using ’trench’ tec

 8.1. buk7507-30b buk7607-30b.pdf Size:298K _philips

BUK7608-40B
BUK7608-40B

BUK75/7607-30B TrenchMOS™ standard level FET Rev. 01 — 07 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7507-30B in SOT78 (TO-220AB) BUK7607-30B in SOT404 (D2-PAK). 1.2 Features Very low on-st

8.2. buk7606-55a 1.pdf Size:56K _philips

BUK7608-40B
BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A ’trench’ technology the dev

 8.3. buk7605-30a.pdf Size:55K _philips

BUK7608-40B
BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) 75 A ’trench’ technology the dev

8.4. buk7509-75a buk7609-75a.pdf Size:319K _philips

BUK7608-40B
BUK7608-40B

BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ te

 8.5. buk7507-55b buk7607-55b.pdf Size:296K _philips

BUK7608-40B
BUK7608-40B

BUK75/7607-55B TrenchMOS™ standard level FET Rev. 01 — 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

8.6. buk7605-30a 2.pdf Size:55K _philips

BUK7608-40B
BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) 75 A ’trench’ technology the dev

8.7. buk7509 buk7609 75a 02.pdf Size:318K _philips

BUK7608-40B
BUK7608-40B

BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ te

8.8. buk7506-55a buk7606-55a.pdf Size:320K _philips

BUK7608-40B
BUK7608-40B

BUK7506-55A; BUK7606-55A TrenchMOS™ standard level FET Rev. 02 — 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q10

8.9. buk7509-55a buk7609-55a.pdf Size:314K _philips

BUK7608-40B
BUK7608-40B

BUK75/7609-55A TrenchMOS™ standard level FET Rev. 01 — 6 August 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7509-55A in SOT78 (TO-220AB) BUK7609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 complia

8.10. buk7506-75b buk7606-75b.pdf Size:322K _philips

BUK7608-40B
BUK7608-40B

BUK75/7606-75B TrenchMOS™ standard level FET Rev. 02 — 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

8.11. buk7606-30 1.pdf Size:52K _philips

BUK7608-40B
BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A ’trench’ technology. The devi

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