Справочник MOSFET. BUK7608-40B

 

BUK7608-40B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK7608-40B
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 157 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK7608-40B

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK7608-40B Datasheet (PDF)

 ..1. Size:702K  nxp
 buk7608-40b.pdf pdf_icon

BUK7608-40B

BUK7608-40BN-channel TrenchMOS standard level FETRev. 04 24 September 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

 6.1. Size:68K  philips
 buk7508 buk7608-55a 1.pdf pdf_icon

BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec

 6.2. Size:54K  philips
 buk7608-55 2.pdf pdf_icon

BUK7608-40B

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the devi

 6.3. Size:785K  nxp
 buk7608-55a.pdf pdf_icon

BUK7608-40B

BUK7608-55AN-channel TrenchMOS standard level FETRev. 03 14 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK7575-100A , BUK7575-55A , BUK7604-40A , BUK7606-55A , BUK7606-55B , BUK7606-75B , BUK7607-30B , BUK7607-55B , IRFP460 , BUK7608-55A , BUK7609-55A , BUK7609-75A , BUK7610-100B , BUK7610-55AL , BUK7611-55A , BUK7611-55B , BUK7613-75B .

History: BSZ035N03MSG | STW32N55M5 | BUK7M10-40E | SVF8NN70FJ | SDF360JEA | SDF6N60JAA | APM4435K

 

 
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