BUK7610-100B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7610-100B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: D2PAK

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BUK7610-100B datasheet

 ..1. Size:737K  nxp
 buk7610-100b.pdf pdf_icon

BUK7610-100B

BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and ben

 6.1. Size:195K  philips
 buk7610-55al.pdf pdf_icon

BUK7610-100B

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri

 6.2. Size:53K  philips
 buk7610-30 1.pdf pdf_icon

BUK7610-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The devi

 6.3. Size:735K  nxp
 buk7610-55al.pdf pdf_icon

BUK7610-100B

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a

MOSTRAR MÁS

Otros transistores... BUK7606-55B, BUK7606-75B, BUK7607-30B, BUK7607-55B, BUK7608-40B, BUK7608-55A, BUK7609-55A, BUK7609-75A, IRF640N, BUK7610-55AL, BUK7611-55A, BUK7611-55B, BUK7613-75B, BUK7614-55A, BUK7619-100B, BUK761R8-30C, BUK7620-100A