BUK7610-100B Datasheet and Replacement

BUK7610-100BN-channel TrenchMOS standard level FET6 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.1.2 Features and ben

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri

Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a