Справочник MOSFET. BUK7610-100B

 

BUK7610-100B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK7610-100B
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 80 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: D2PAK
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK7610-100B Datasheet (PDF)

 ..1. Size:737K  nxp
 buk7610-100b.pdf pdf_icon

BUK7610-100B

BUK7610-100BN-channel TrenchMOS standard level FET6 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.1.2 Features and ben

 6.1. Size:195K  philips
 buk7610-55al.pdf pdf_icon

BUK7610-100B

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri

 6.2. Size:53K  philips
 buk7610-30 1.pdf pdf_icon

BUK7610-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi

 6.3. Size:735K  nxp
 buk7610-55al.pdf pdf_icon

BUK7610-100B

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a

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Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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