BUK7610-100B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK7610-100B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 80 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK7610-100B
BUK7610-100B Datasheet (PDF)
buk7610-100b.pdf
BUK7610-100BN-channel TrenchMOS standard level FET6 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.1.2 Features and ben
buk7610-55al.pdf
BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri
buk7610-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi
buk7610-55al.pdf
BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918