BUK7620-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK7620-55A Datasheet (PDF)

4.1. Size:55K philips
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Philips Semiconductors Product specification TrenchMOS transistor BUK7620-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 52 Atrench technology the devi

6.1. Size:315K philips
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BUK7520-100A;BUK7620-100ATrenchMOS standard level FETRev. 01 5 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7520-100A in SOT78 (TO-220AB)BUK7620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS

6.2. Size:779K nxp
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BUK7620-100AN-channel TrenchMOS standard level FETRev. 2 2 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

Otros transistores... BUK7610-55AL , BUK7611-55A , BUK7611-55B , BUK7613-75B , BUK7614-55A , BUK7619-100B , BUK761R8-30C , BUK7620-100A , IRFB4115 , BUK7623-75A , BUK7624-55A , BUK7626-100B , BUK7628-100A , BUK7628-55A , BUK762R0-40C , BUK762R7-30B , BUK7635-100A .