BUK7620-55A Datasheet. Specs and Replacement
Type Designator: BUK7620-55A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 118 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: D2PAK
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BUK7620-55A substitution
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BUK7620-55A datasheet
buk7620-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7620-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 52 A trench technology the devi... See More ⇒
buk7620-100a.pdf
BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒
Detailed specifications: BUK7610-55AL, BUK7611-55A, BUK7611-55B, BUK7613-75B, BUK7614-55A, BUK7619-100B, BUK761R8-30C, BUK7620-100A, P55NF06, BUK7623-75A, BUK7624-55A, BUK7626-100B, BUK7628-100A, BUK7628-55A, BUK762R0-40C, BUK762R7-30B, BUK7635-100A
Keywords - BUK7620-55A MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
