BUK7620-55A PDF and Equivalents Search

 

BUK7620-55A PDF Specs and Replacement


   Type Designator: BUK7620-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: D2PAK
 

 BUK7620-55A substitution

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BUK7620-55A PDF Specs

 4.1. Size:55K  philips
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BUK7620-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7620-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 52 A trench technology the devi... See More ⇒

 6.1. Size:315K  philips
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BUK7620-55A

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 6.2. Size:779K  nxp
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BUK7620-55A

BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒

Detailed specifications: BUK7610-55AL , BUK7611-55A , BUK7611-55B , BUK7613-75B , BUK7614-55A , BUK7619-100B , BUK761R8-30C , BUK7620-100A , P55NF06 , BUK7623-75A , BUK7624-55A , BUK7626-100B , BUK7628-100A , BUK7628-55A , BUK762R0-40C , BUK762R7-30B , BUK7635-100A .

Keywords - BUK7620-55A MOSFET specs

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