BUK7675-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK7675-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: D2PAK

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BUK7675-55A datasheet

 ..1. Size:334K  philips
 buk7575-55a buk7675-55a.pdf pdf_icon

BUK7675-55A

BUK7575-55A; BUK7675-55A TrenchMOS standard level FET Rev. 01 8 December 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7575-55A in SOT78 (TO-220AB) BUK7675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec

 ..2. Size:722K  nxp
 buk7675-55a.pdf pdf_icon

BUK7675-55A

BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101

 ..3. Size:1142K  cn vbsemi
 buk7675-55a.pdf pdf_icon

BUK7675-55A

BUK7675-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS

 4.1. Size:56K  philips
 buk7675-55 2.pdf pdf_icon

BUK7675-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 19.7 A trench technology the de

MOSTRAR MÁS

Otros transistores... BUK763R6-40C, BUK7640-100A, BUK764R0-55B, BUK764R0-75C, BUK764R3-40B, BUK765R2-40B, BUK7660-100A, BUK7675-100A, 13N50, BUK78150-55A, BUK7880-55A, BUK7905-40AI, BUK7905-40AIE, BUK7905-40ATE, BUK7907-40ATC, BUK7907-55AIE, BUK7907-55ATE