BUK7675-55A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7675-55A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20.3
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
D2PAK
BUK7675-55A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7675-55A
Datasheet (PDF)
..1. Size:334K philips
buk7575-55a buk7675-55a.pdf
BUK7575-55A; BUK7675-55ATrenchMOS standard level FETRev. 01 8 December 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-55A in SOT78 (TO-220AB)BUK7675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec
..2. Size:722K nxp
buk7675-55a.pdf
BUK7675-55AN-channel TrenchMOS standard level FET25 August 2014 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101
..3. Size:1142K cn vbsemi
buk7675-55a.pdf
BUK7675-55Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS
4.1. Size:56K philips
buk7675-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 19.7 Atrench technology the de
6.1. Size:314K philips
buk7575-100a buk7675-100a.pdf
BUK7575-100A;BUK7675-100ATrenchMOS standard level FETRev. 01 24 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404 (D 2-PAK).2. Features TrenchMOS
6.2. Size:690K nxp
buk7675-100a.pdf
BUK7675-100AN-channel TrenchMOS standard level FETRev. 02 31 July 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F
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