BUK7675-55A Specs and Replacement

Type Designator: BUK7675-55A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: D2PAK

BUK7675-55A substitution

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BUK7675-55A datasheet

 ..1. Size:334K  philips
buk7575-55a buk7675-55a.pdf pdf_icon

BUK7675-55A

BUK7575-55A; BUK7675-55A TrenchMOS standard level FET Rev. 01 8 December 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7575-55A in SOT78 (TO-220AB) BUK7675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec... See More ⇒

 ..2. Size:722K  nxp
buk7675-55a.pdf pdf_icon

BUK7675-55A

BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 ... See More ⇒

 ..3. Size:1142K  cn vbsemi
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BUK7675-55A

BUK7675-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS ... See More ⇒

 4.1. Size:56K  philips
buk7675-55 2.pdf pdf_icon

BUK7675-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 19.7 A trench technology the de... See More ⇒

Detailed specifications: BUK763R6-40C, BUK7640-100A, BUK764R0-55B, BUK764R0-75C, BUK764R3-40B, BUK765R2-40B, BUK7660-100A, BUK7675-100A, 13N50, BUK78150-55A, BUK7880-55A, BUK7905-40AI, BUK7905-40AIE, BUK7905-40ATE, BUK7907-40ATC, BUK7907-55AIE, BUK7907-55ATE

Keywords - BUK7675-55A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.