Справочник MOSFET. BUK7675-55A

 

BUK7675-55A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7675-55A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 62 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20.3 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для BUK7675-55A

 

 

BUK7675-55A Datasheet (PDF)

 ..1. Size:334K  philips
buk7575-55a buk7675-55a.pdf

BUK7675-55A
BUK7675-55A

BUK7575-55A; BUK7675-55ATrenchMOS standard level FETRev. 01 8 December 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-55A in SOT78 (TO-220AB)BUK7675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

 ..2. Size:722K  nxp
buk7675-55a.pdf

BUK7675-55A
BUK7675-55A

BUK7675-55AN-channel TrenchMOS standard level FET25 August 2014 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101

 ..3. Size:1142K  cn vbsemi
buk7675-55a.pdf

BUK7675-55A
BUK7675-55A

BUK7675-55Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS

 4.1. Size:56K  philips
buk7675-55 2.pdf

BUK7675-55A
BUK7675-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 19.7 Atrench technology the de

 6.1. Size:314K  philips
buk7575-100a buk7675-100a.pdf

BUK7675-55A
BUK7675-55A

BUK7575-100A;BUK7675-100ATrenchMOS standard level FETRev. 01 24 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404 (D 2-PAK).2. Features TrenchMOS

 6.2. Size:690K  nxp
buk7675-100a.pdf

BUK7675-55A
BUK7675-55A

BUK7675-100AN-channel TrenchMOS standard level FETRev. 02 31 July 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

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