2SB535 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB535
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 35 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.5 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar 2SB535
2SB535 Datasheet (PDF)
2sb536.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION With TO-220C package Complement to type 2SD381 Low collector saturation voltage APPLICATIONS Audio frequency power amplifier Low speed power switching PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseA
2sb538.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB538DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -65V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0V(Max.) @I = -10ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier application
2sb532.pdf
isc Silicon PNP Power Transistors 2SB532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sb539.pdf
isc Silicon PNP Power Transistors 2SB539DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD287Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Recommended for 70~80W
2sb536.pdf
isc Silicon PNP Power Transistors 2SB536DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SD381Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25
2sb531.pdf
isc Silicon PNP Power Transistors 2SB531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SD371Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sb530.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB530DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a
2sb537.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB537DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0(Max.) @I = -1ACE(sat) CComplement to Type 2SD382Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
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