2SB535 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB535
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
2SB535 Transistor Equivalent Substitute - Cross-Reference Search
2SB535 Datasheet (PDF)
2sb536.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION With TO-220C package Complement to type 2SD381 Low collector saturation voltage APPLICATIONS Audio frequency power amplifier Low speed power switching PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseA
2sb538.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB538DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -65V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0V(Max.) @I = -10ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier application
2sb532.pdf
isc Silicon PNP Power Transistors 2SB532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sb539.pdf
isc Silicon PNP Power Transistors 2SB539DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD287Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Recommended for 70~80W
2sb536.pdf
isc Silicon PNP Power Transistors 2SB536DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SD381Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25
2sb531.pdf
isc Silicon PNP Power Transistors 2SB531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SD371Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sb530.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB530DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a
2sb537.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB537DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0(Max.) @I = -1ACE(sat) CComplement to Type 2SD382Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
