Биполярный транзистор 2SB535 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB535
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 85 °C
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO39
2SB535 Datasheet (PDF)
2sb536.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION With TO-220C package Complement to type 2SD381 Low collector saturation voltage APPLICATIONS Audio frequency power amplifier Low speed power switching PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseA
2sb538.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB538DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -65V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0V(Max.) @I = -10ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier application
2sb532.pdf
isc Silicon PNP Power Transistors 2SB532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sb539.pdf
isc Silicon PNP Power Transistors 2SB539DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD287Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Recommended for 70~80W
2sb536.pdf
isc Silicon PNP Power Transistors 2SB536DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SD381Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25
2sb531.pdf
isc Silicon PNP Power Transistors 2SB531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SD371Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sb530.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB530DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a
2sb537.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB537DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0(Max.) @I = -1ACE(sat) CComplement to Type 2SD382Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050