2SB566B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB566B  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SB566B

- Selecciónⓘ de transistores por parámetros

 

2SB566B datasheet

 8.1. Size:33K  hitachi
 2sb566.pdf pdf_icon

2SB566B

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB566(K) 2SB566A(K) Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage V

 8.2. Size:257K  jmnic
 2sb566 2sb566a.pdf pdf_icon

2SB566B

JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin

 8.3. Size:150K  inchange semiconductor
 2sb566 2sb566a.pdf pdf_icon

2SB566B

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol

 8.4. Size:218K  inchange semiconductor
 2sb566.pdf pdf_icon

2SB566B

isc Silicon PNP Power Transistor 2SB566 DESCRIPTION Low Collector Saturation Voltage V = -1.0(V)(Max)@I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Complement to Type 2SD476 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applica

MOSTRAR MÁS

Otros transistores... 2SB562, 2SB563, 2SB564, 2SB565, 2SB565A, 2SB566, 2SB566A, 2SB566AK, 8050, 2SB566C, 2SB566K, 2SB567, 2SB568, 2SB569, 2SB56A, 2SB57, 2SB570