2SB59 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB59
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.4 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO1
Búsqueda de reemplazo de transistor bipolar 2SB59
2SB59 Datasheet (PDF)
2sb595.pdf
2SB595 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD525ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 40 W Ju
2sb596.pdf
2SB596 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD526ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Junc
2sb595.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB595 DESCRIPTION With TO-220C package Complement to type 2SD525 High breakdown voltage :VCEO=-100V Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emi
2sb596.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB596 DESCRIPTION With TO-220C package Complement to type 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute
st2sb596.pdf
ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCEO 5 VEmitter Base Voltage -VEBO 4 ACollector Current -IC 0.4 ABase Current -IB OPower Dissipation (Tc = 25 C) PC 30 WOJu
2sb595.pdf
isc Silicon PNP Power Transistor 2SB595DESCRIPTIONLow Collector Saturation Voltage:V = -2.0(V)(Max)@I = -4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOComplement to Type 2SD525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 30W high-fidelity aud
2sb596.pdf
isc Silicon PNP Power Transistor 2SB596DESCRIPTIONLow Collector Saturation Voltage:V = -1.7(V)(Max)@I = -3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOComplement to Type 2SD526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
