2SB59 Datasheet. Equivalente

 0.1. Size:69K  wingshing
 2sb595.pdf

2SB595 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD525 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 40 W Ju

 0.2. Size:69K  wingshing
 2sb596.pdf

2SB596 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD526 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Junc

 0.3. Size:216K  jmnic
 2sb595.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB595 DESCRIPTION With TO-220C package Complement to type 2SD525 High breakdown voltage VCEO=-100V Low collector saturation volage VCE(sat)=-2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emi

 0.4. Size:235K  jmnic
 2sb596.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB596 DESCRIPTION With TO-220C package Complement to type 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute

 0.5. Size:527K  semtech
 st2sb596.pdf

ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 80 V Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 5 V Emitter Base Voltage -VEBO 4 A Collector Current -IC 0.4 A Base Current -IB O Power Dissipation (Tc = 25 C) PC 30 W O Ju

 0.6. Size:218K  inchange semiconductor
 2sb595.pdf

isc Silicon PNP Power Transistor 2SB595 DESCRIPTION Low Collector Saturation Voltage V = -2.0(V)(Max)@I = -4A CE(sat) C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Complement to Type 2SD525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 30W high-fidelity aud

 0.7. Size:219K  inchange semiconductor
 2sb596.pdf

isc Silicon PNP Power Transistor 2SB596 DESCRIPTION Low Collector Saturation Voltage V = -1.7(V)(Max)@I = -3A CE(sat) C Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Complement to Type 2SD526 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity a