2SB596Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB596Y

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Capacitancia de salida (Cc): 130 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO220

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2SB596Y datasheet

 8.1. Size:69K  wingshing
 2sb596.pdf pdf_icon

2SB596Y

2SB596 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD526 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Junc

 8.2. Size:235K  jmnic
 2sb596.pdf pdf_icon

2SB596Y

JMnic Product Specification Silicon PNP Power Transistors 2SB596 DESCRIPTION With TO-220C package Complement to type 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute

 8.3. Size:527K  semtech
 st2sb596.pdf pdf_icon

2SB596Y

ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 80 V Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCEO 5 V Emitter Base Voltage -VEBO 4 A Collector Current -IC 0.4 A Base Current -IB O Power Dissipation (Tc = 25 C) PC 30 W O Ju

 8.4. Size:219K  inchange semiconductor
 2sb596.pdf pdf_icon

2SB596Y

isc Silicon PNP Power Transistor 2SB596 DESCRIPTION Low Collector Saturation Voltage V = -1.7(V)(Max)@I = -3A CE(sat) C Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Complement to Type 2SD526 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity a

MOSTRAR MÁS

Otros transistores... 2SB59, 2SB595, 2SB595O, 2SB595R, 2SB595Y, 2SB596, 2SB596O, 2SB596R, BC547B, 2SB598, 2SB598D, 2SB598E, 2SB598F, 2SB598G, 2SB598NP, 2SB599, 2SB60