All Transistors. 2SB596Y Datasheet

 

2SB596Y Datasheet and Replacement


   Type Designator: 2SB596Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220
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2SB596Y Datasheet (PDF)

 8.1. Size:69K  wingshing
 2sb596.pdf pdf_icon

2SB596Y

2SB596 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD526ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Junc

 8.2. Size:235K  jmnic
 2sb596.pdf pdf_icon

2SB596Y

JMnic Product Specification Silicon PNP Power Transistors 2SB596 DESCRIPTION With TO-220C package Complement to type 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute

 8.3. Size:527K  semtech
 st2sb596.pdf pdf_icon

2SB596Y

ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCEO 5 VEmitter Base Voltage -VEBO 4 ACollector Current -IC 0.4 ABase Current -IB OPower Dissipation (Tc = 25 C) PC 30 WOJu

 8.4. Size:219K  inchange semiconductor
 2sb596.pdf pdf_icon

2SB596Y

isc Silicon PNP Power Transistor 2SB596DESCRIPTIONLow Collector Saturation Voltage:V = -1.7(V)(Max)@I = -3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOComplement to Type 2SD526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity a

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Datasheet: 2SB59 , 2SB595 , 2SB595O , 2SB595R , 2SB595Y , 2SB596 , 2SB596O , 2SB596R , D667 , 2SB598 , 2SB598D , 2SB598E , 2SB598F , 2SB598G , 2SB598NP , 2SB599 , 2SB60 .

History: KT8107D2 | TTB002 | BFV12 | UN9217R | 2N1056 | 2SC999A | ECG2306

Keywords - 2SB596Y transistor datasheet

 2SB596Y cross reference
 2SB596Y equivalent finder
 2SB596Y lookup
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