2SB653A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB653A  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO3

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SB653A

- Selecciónⓘ de transistores por parámetros

 

2SB653A datasheet

 8.1. Size:211K  inchange semiconductor
 2sb653.pdf pdf_icon

2SB653A

isc Silicon PNP Power Transistors 2SB653 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SD673 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:356K  jmnic
 2sb656.pdf pdf_icon

2SB653A

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

 9.2. Size:211K  inchange semiconductor
 2sb655.pdf pdf_icon

2SB653A

isc Silicon PNP Power Transistors 2SB655 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD675 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 9.3. Size:211K  inchange semiconductor
 2sb654.pdf pdf_icon

2SB653A

isc Silicon PNP Power Transistors 2SB654 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SD674 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

MOSTRAR MÁS

Otros transistores... 2SB649AC, 2SB649B, 2SB649C, 2SB649D, 2SB65, 2SB650, 2SB650H, 2SB653, BDT88, 2SB654, 2SB654A, 2SB655, 2SB655A, 2SB656, 2SB656A, 2SB66, 2SB668