All Transistors. 2SB653A Datasheet

 

2SB653A Datasheet and Replacement


   Type Designator: 2SB653A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3
 

 2SB653A Substitution

   - BJT ⓘ Cross-Reference Search

   

2SB653A Datasheet (PDF)

 8.1. Size:211K  inchange semiconductor
 2sb653.pdf pdf_icon

2SB653A

isc Silicon PNP Power Transistors 2SB653DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SD673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:356K  jmnic
 2sb656.pdf pdf_icon

2SB653A

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB656 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll

 9.2. Size:211K  inchange semiconductor
 2sb655.pdf pdf_icon

2SB653A

isc Silicon PNP Power Transistors 2SB655DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 9.3. Size:211K  inchange semiconductor
 2sb654.pdf pdf_icon

2SB653A

isc Silicon PNP Power Transistors 2SB654DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

SHOW MORE

Datasheet: 2SB649AC , 2SB649B , 2SB649C , 2SB649D , 2SB65 , 2SB650 , 2SB650H , 2SB653 , BD777 , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 , 2SB656A , 2SB66 , 2SB668 .

History: 2SB705 | 2N1174 | BC847BQA | NZT45H8 | BFW45 | KSC1507R | 2SD1707

Keywords - 2SB653A transistor datasheet

 2SB653A cross reference
 2SB653A equivalent finder
 2SB653A lookup
 2SB653A substitution
 2SB653A replacement

 

 
Back to Top

 


 
.