2SB66 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB66 Datasheet (PDF)

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JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

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INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB669DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = -1AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switchingapplic

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INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = -0.5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switchingapp

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .