2SB66 Specs and Replacement
Type Designator: 2SB66
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.6 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
2SB66 Transistor Equivalent Substitute - Cross-Reference Search
2SB66 detailed specifications
2sb668.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO... See More ⇒
2sb669.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB669 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -1A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applic... See More ⇒
2sb668.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -0.5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching app... See More ⇒
Detailed specifications: 2SB653 , 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 , 2SB656A , 2N3904 , 2SB668 , 2SB668A , 2SB669 , 2SB669A , 2SB66H , 2SB67 , 2SB670 , 2SB670A .
Keywords - 2SB66 transistor specs
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