2SB66 Datasheet and Replacement
Type Designator: 2SB66
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.6 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
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2SB66 Datasheet (PDF)
2sb668.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
2sb669.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB669DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = -1AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switchingapplic
2sb668.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = -0.5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switchingapp
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MPQ2907AR | CLB764 | CTP1320 | KRC403V | PTB20135 | 2SD288R | KSA5034
Keywords - 2SB66 transistor datasheet
2SB66 cross reference
2SB66 equivalent finder
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History: MPQ2907AR | CLB764 | CTP1320 | KRC403V | PTB20135 | 2SD288R | KSA5034



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