2SB669 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB669  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8000

Encapsulados: TO220

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2SB669 datasheet

 ..1. Size:185K  inchange semiconductor
 2sb669.pdf pdf_icon

2SB669

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB669 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -1A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applic

 9.1. Size:148K  jmnic
 2sb668.pdf pdf_icon

2SB669

JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 9.2. Size:184K  inchange semiconductor
 2sb668.pdf pdf_icon

2SB669

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -0.5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching app

Otros transistores... 2SB654A, 2SB655, 2SB655A, 2SB656, 2SB656A, 2SB66, 2SB668, 2SB668A, C945, 2SB669A, 2SB66H, 2SB67, 2SB670, 2SB670A, 2SB671, 2SB671A, 2SB672