2SB669 Datasheet. Specs and Replacement

Type Designator: 2SB669  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8000

Noise Figure, dB: -

Package: TO220

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2SB669 datasheet

 ..1. Size:185K  inchange semiconductor

 2sb669.pdf pdf_icon

2SB669

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB669 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -1A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applic... See More ⇒

 9.1. Size:148K  jmnic

 2sb668.pdf pdf_icon

2SB669

JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO... See More ⇒

 9.2. Size:184K  inchange semiconductor

 2sb668.pdf pdf_icon

2SB669

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -0.5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching app... See More ⇒

Detailed specifications: 2SB654A, 2SB655, 2SB655A, 2SB656, 2SB656A, 2SB66, 2SB668, 2SB668A, C945, 2SB669A, 2SB66H, 2SB67, 2SB670, 2SB670A, 2SB671, 2SB671A, 2SB672

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