2SB756 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

4.3 MAXI : 300 I I-10I I loo-810-45I-3 I-201 I I -0.03 -0.1 -0.3 -1 -3 -10 -30-2I -8-625 75 100 125 175 200

JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and sy

JMnic Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION With TO-220C package Complement to type 2SD843 Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current :I =-7A CLow collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected

isc Silicon PNP Power Transistor 2SB757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD847Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulatorsGeneral

isc Silicon PNP Power Transistor 2SB755DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD845Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

isc Silicon PNP Power Transistor 2SB753DESCRIPTIONHigh Collector Current:I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD843Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier applicatio

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Collector Current: I = -7ACLow Collector Saturation Voltage-: V = -0.4V(Max) @I = -4ACE(sat) CComplement to Type 2SD844Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh cur