2SB756 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

4.3 MAX I 300 I I -10 I I loo -8 10 -4 5 I- 3 I-201 I I -0.03 -0.1 -0.3 -1 -3 -10 -30 -2 I -8 -6 25 75 100 125 175 200

JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and sy

JMnic Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION With TO-220C package Complement to type 2SD843 Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current I =-7A C Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected

isc Silicon PNP Power Transistor 2SB757 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD847 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier applications Series regulators General

isc Silicon PNP Power Transistor 2SB755 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD845 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

isc Silicon PNP Power Transistor 2SB753 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -4A CE(sat) C High Collector Power Dissipation Complement to Type 2SD843 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications Power amplifier applicatio

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO High Collector Current I = -7A C Low Collector Saturation Voltage- V = -0.4V(Max) @I = -4A CE(sat) C Complement to Type 2SD844 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High cur