2SB756 Datasheet and Replacement

   Type Designator: 2SB756
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 450 pF
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: MT-200

2SB756 Substitution

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2SB756 Datasheet (PDF)

9.1. Size:98K toshiba
2sb754.pdf pdf_icon

9.2. Size:104K panasonic
2sb751.pdf pdf_icon

9.3. Size:117K panasonic
2sb759.pdf pdf_icon

9.4. Size:516K no
2sb755.pdf pdf_icon

4.3 MAXI : 300 I I-10I I loo-810-45I-3 I-201 I I -0.03 -0.1 -0.3 -1 -3 -10 -30-2I -8-625 75 100 125 175 200

9.5. Size:41K no
2sb753.pdf pdf_icon

9.6. Size:58K no
2sb750.pdf pdf_icon

9.7. Size:155K jmnic
2sb757.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

9.8. Size:170K jmnic
2sb755.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and sy

9.9. Size:209K jmnic
2sb753.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION With TO-220C package Complement to type 2SD843 Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl

9.10. Size:326K jmnic
2sb754.pdf pdf_icon

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current :I =-7A CLow collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected

9.11. Size:216K inchange semiconductor
2sb757.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD847Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulatorsGeneral

9.12. Size:220K inchange semiconductor
2sb755.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB755DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD845Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

9.13. Size:216K inchange semiconductor
2sb753.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB753DESCRIPTIONHigh Collector Current:I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD843Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier applicatio

9.14. Size:199K inchange semiconductor
2sb754.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Collector Current: I = -7ACLow Collector Saturation Voltage-: V = -0.4V(Max) @I = -4ACE(sat) CComplement to Type 2SD844Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh cur

Datasheet: 2SB751B , 2SB753 , 2SB753O , 2SB753Y , 2SB754 , 2SB754O , 2SB754Y , 2SB755 , S8550 , 2SB757 , 2SB758 , 2SB758A , 2SB759 , 2SB759A , 2SB75A , 2SB75AH , 2SB75H .