2SB756 - Даташиты. Аналоги. Основные параметры

   Наименование производителя: 2SB756
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 120 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Ёмкость коллекторного перехода (Cc): 450 pf
   Статический коэффициент передачи тока (hfe): 55
   Корпус транзистора: MT-200

Аналоги (замена) для 2SB756

2SB756 Datasheet (PDF)

9.1. Size:98K toshiba
2sb754.pdf pdf_icon

9.2. Size:104K panasonic
2sb751.pdf pdf_icon

9.3. Size:117K panasonic
2sb759.pdf pdf_icon

9.4. Size:516K no
2sb755.pdf pdf_icon

4.3 MAX I 300 I I -10 I I loo -8 10 -4 5 I- 3 I-201 I I -0.03 -0.1 -0.3 -1 -3 -10 -30 -2 I -8 -6 25 75 100 125 175 200

9.5. Size:41K no
2sb753.pdf pdf_icon

9.6. Size:58K no
2sb750.pdf pdf_icon

9.7. Size:155K jmnic
2sb757.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

9.8. Size:170K jmnic
2sb755.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and sy

9.9. Size:209K jmnic
2sb753.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION With TO-220C package Complement to type 2SD843 Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl

9.10. Size:326K jmnic
2sb754.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current I =-7A C Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected

9.11. Size:216K inchange semiconductor
2sb757.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB757 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD847 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier applications Series regulators General

9.12. Size:220K inchange semiconductor
2sb755.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB755 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD845 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

9.13. Size:216K inchange semiconductor
2sb753.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB753 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -4A CE(sat) C High Collector Power Dissipation Complement to Type 2SD843 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications Power amplifier applicatio

9.14. Size:199K inchange semiconductor
2sb754.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO High Collector Current I = -7A C Low Collector Saturation Voltage- V = -0.4V(Max) @I = -4A CE(sat) C Complement to Type 2SD844 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High cur

Другие транзисторы... 2SB751B , 2SB753 , 2SB753O , 2SB753Y , 2SB754 , 2SB754O , 2SB754Y , 2SB755 , B772 , 2SB757 , 2SB758 , 2SB758A , 2SB759 , 2SB759A , 2SB75A , 2SB75AH , 2SB75H .