Справочник транзисторов. 2SB756

 

Биполярный транзистор 2SB756 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB756
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 120 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Ёмкость коллекторного перехода (Cc): 450 pf
   Статический коэффициент передачи тока (hfe): 55
   Корпус транзистора: MT-200

 Аналоги (замена) для 2SB756

 

 

2SB756 Datasheet (PDF)

 9.1. Size:98K  toshiba
2sb754.pdf

2SB756
2SB756

 9.2. Size:104K  panasonic
2sb751.pdf

2SB756
2SB756

 9.3. Size:117K  panasonic
2sb759.pdf

2SB756
2SB756

 9.4. Size:516K  no
2sb755.pdf

2SB756
2SB756

4.3 MAXI : 300 I I-10I I loo-810-45I-3 I-201 I I -0.03 -0.1 -0.3 -1 -3 -10 -30-2I -8-625 75 100 125 175 200

 9.5. Size:41K  no
2sb753.pdf

2SB756

 9.6. Size:58K  no
2sb750.pdf

2SB756

 9.7. Size:155K  jmnic
2sb757.pdf

2SB756
2SB756

JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

 9.8. Size:170K  jmnic
2sb755.pdf

2SB756
2SB756

JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and sy

 9.9. Size:209K  jmnic
2sb753.pdf

2SB756
2SB756

JMnic Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION With TO-220C package Complement to type 2SD843 Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl

 9.10. Size:326K  jmnic
2sb754.pdf

2SB756
2SB756

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current :I =-7A CLow collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected

 9.11. Size:216K  inchange semiconductor
2sb757.pdf

2SB756
2SB756

isc Silicon PNP Power Transistor 2SB757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD847Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulatorsGeneral

 9.12. Size:220K  inchange semiconductor
2sb755.pdf

2SB756
2SB756

isc Silicon PNP Power Transistor 2SB755DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD845Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

 9.13. Size:216K  inchange semiconductor
2sb753.pdf

2SB756
2SB756

isc Silicon PNP Power Transistor 2SB753DESCRIPTIONHigh Collector Current:I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD843Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier applicatio

 9.14. Size:199K  inchange semiconductor
2sb754.pdf

2SB756
2SB756

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Collector Current: I = -7ACLow Collector Saturation Voltage-: V = -0.4V(Max) @I = -4ACE(sat) CComplement to Type 2SD844Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh cur

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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