2SB80 Todos los transistores

 

2SB80 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB80
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 4 W
   Tensión colector-base (Vcb): 25 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 60 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SB80

 

2SB80 Datasheet (PDF)

 0.1. Size:211K  nec
2sb800.pdf

2SB80
2SB80

 0.2. Size:222K  nec
2sb804.pdf

2SB80
2SB80

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2sb805 2sb806.pdf

2SB80
2SB80

 0.4. Size:1087K  kexin
2sb800.pdf

2SB80
2SB80

SMD Type TransistorsPNP Transistors2SB8001.70 0.1 Features High Collector to Emitter Voltage:VCEO>-80V Complement to 2SD10010.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Curr

 0.5. Size:861K  kexin
2sb805.pdf

2SB80
2SB80

SMD Type TransistorsSMD TypePNP Transistors2SB8051.70 0.1FeaturesHigh collector to emitter voltage: VCEO -100V.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -100 VCollector-emitter voltage VCEO -100 VEmitter-base voltage VEBO -5 VCollector current IC -0.7 ACollector current

 0.6. Size:1121K  kexin
2sb804.pdf

2SB80
2SB80

SMD Type TransistorsPNP Transistors2SB804 Features1.70 0.1 World standard miniature package: SOT-89 High collector to base voltage:VCBO -100V Excell DC Current gain linearity.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25 Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector

 0.7. Size:817K  kexin
2sb806.pdf

2SB80
2SB80

SMD Type TransistorsSMD TypePNP Transistors2SB806 Features Classification of hfe(1)1.70 0.1 High collector to emitter voltage: VCEO -120V. =0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VC

 0.8. Size:633K  cn shikues
2sb804aw 2sb804av 2sb804au.pdf

2SB80

 0.9. Size:652K  cn shikues
2sb805km 2sb805kl 2sb805kk.pdf

2SB80

 0.10. Size:661K  cn shikues
2sb806-kr 2sb806-kq 2sb806-kp.pdf

2SB80

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC486B

 

 
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History: BC486B

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Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
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