2SB80 Specs and Replacement
Type Designator: 2SB80
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 60 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO3
2SB80 Substitution
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2SB80 datasheet
SMD Type Transistors PNP Transistors 2SB800 1.70 0.1 Features High Collector to Emitter Voltage VCEO>-80V Complement to 2SD1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Curr... See More ⇒
Detailed specifications: 2SB798 , 2SB798DK , 2SB798DL , 2SB798DM , 2SB799 , 2SB799MK , 2SB799ML , 2SB799MM , BD140 , 2SB800 , 2SB800FK , 2SB800FL , 2SB800FM , 2SB801 , 2SB802 , 2SB803 , 2SB804 .
History: 2SB800
Keywords - 2SB80 pdf specs
2SB80 cross reference
2SB80 equivalent finder
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History: 2SB800
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