2SB828S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB828S

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 140

Encapsulados: TO218

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2SB828S datasheet

 8.1. Size:98K  sanyo
 2sb828.pdf pdf_icon

2SB828S

 8.2. Size:213K  jmnic
 2sb828.pdf pdf_icon

2SB828S

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2

 8.3. Size:220K  inchange semiconductor
 2sb828.pdf pdf_icon

2SB828S

isc Silicon PNP Power Transistor 2SB828 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters, and o

MOSTRAR MÁS

Otros transistores... 2SB826S, 2SB827, 2SB827Q, 2SB827R, 2SB827S, 2SB828, 2SB828Q, 2SB828R, 2SC828, 2SB829, 2SB829Q, 2SB829R, 2SB829T, 2SB83, 2SB830, 2SB831, 2SB831B