2SB828S Datasheet and Replacement
Type Designator: 2SB828S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO218
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2SB828S Datasheet (PDF)
2sb828.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2
2sb828.pdf

isc Silicon PNP Power Transistor 2SB828DESCRIPTIONHigh Collector Current:: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -6ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters,and o
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: CH867UPNGP | NJD2873T4G | AFY29 | ET5065 | FZT560 | 2SC2411KGP | KT890V
Keywords - 2SB828S transistor datasheet
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History: CH867UPNGP | NJD2873T4G | AFY29 | ET5065 | FZT560 | 2SC2411KGP | KT890V



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