All Transistors. 2SB828S Datasheet

 

2SB828S Datasheet and Replacement


   Type Designator: 2SB828S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO218
 

 2SB828S Substitution

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2SB828S Datasheet (PDF)

 8.1. Size:98K  sanyo
 2sb828.pdf pdf_icon

2SB828S

 8.2. Size:213K  jmnic
 2sb828.pdf pdf_icon

2SB828S

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2

 8.3. Size:220K  inchange semiconductor
 2sb828.pdf pdf_icon

2SB828S

isc Silicon PNP Power Transistor 2SB828DESCRIPTIONHigh Collector Current:: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -6ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters,and o

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Datasheet: 2SB826S , 2SB827 , 2SB827Q , 2SB827R , 2SB827S , 2SB828 , 2SB828Q , 2SB828R , B647 , 2SB829 , 2SB829Q , 2SB829R , 2SB829T , 2SB83 , 2SB830 , 2SB831 , 2SB831B .

Keywords - 2SB828S transistor datasheet

 2SB828S cross reference
 2SB828S equivalent finder
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