2SB828S Specs and Replacement

Type Designator: 2SB828S

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO218

 2SB828S Substitution

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2SB828S datasheet

 8.1. Size:98K  sanyo

 2sb828.pdf pdf_icon

2SB828S

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 8.2. Size:213K  jmnic

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2SB828S

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 ... See More ⇒

 8.3. Size:220K  inchange semiconductor

 2sb828.pdf pdf_icon

2SB828S

isc Silicon PNP Power Transistor 2SB828 DESCRIPTION High Collector Current I = -12A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters, and o... See More ⇒

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Detailed specifications: 2SB826S, 2SB827, 2SB827Q, 2SB827R, 2SB827S, 2SB828, 2SB828Q, 2SB828R, 2SC828, 2SB829, 2SB829Q, 2SB829R, 2SB829T, 2SB83, 2SB830, 2SB831, 2SB831B

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