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2SB845 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB845
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-base (Vcb): 130 V
   Tensión colector-emisor (Vce): 110 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO220
 

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2SB845 Datasheet (PDF)

 9.1. Size:152K  jmnic
2sb849.pdf pdf_icon

2SB845

JMnic Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

 9.2. Size:105K  inchange semiconductor
2sb849a.pdf pdf_icon

2SB845

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION With TO-3PFa package Complement to type 2SD1110A Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU

 9.3. Size:192K  inchange semiconductor
2sb848.pdf pdf_icon

2SB845

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB848DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETE

 9.4. Size:122K  inchange semiconductor
2sb849.pdf pdf_icon

2SB845

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

Otros transistores... 2SB840 , 2SB840L , 2SB841 , 2SB841L , 2SB842 , 2SB842L , 2SB843 , 2SB844 , 2N3906 , 2SB846 , 2SB848 , 2SB849 , 2SB849A , 2SB85 , 2SB850 , 2SB850A , 2SB851 .

History: 2SC4116-Y | L8050RLT3G | KSC1188 | RN1965 | 2SC376 | TIP561 | MMBT5088LT1G

 

 
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