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2SB849A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB849A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 130 V
   Tensión colector-emisor (Vce): 130 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7 MHz
   Capacitancia de salida (Cc): 340 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO218
 

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2SB849A Datasheet (PDF)

 ..1. Size:105K  inchange semiconductor
 2sb849a.pdf pdf_icon

2SB849A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION With TO-3PFa package Complement to type 2SD1110A Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU

 8.1. Size:152K  jmnic
 2sb849.pdf pdf_icon

2SB849A

JMnic Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

 8.2. Size:122K  inchange semiconductor
 2sb849.pdf pdf_icon

2SB849A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

 9.1. Size:192K  inchange semiconductor
 2sb848.pdf pdf_icon

2SB849A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB848DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETE

MOSTRAR MÁS

Otros transistores... 2SB842 , 2SB842L , 2SB843 , 2SB844 , 2SB845 , 2SB846 , 2SB848 , 2SB849 , TIP122 , 2SB85 , 2SB850 , 2SB850A , 2SB851 , 2SB852 , 2SB852UA , 2SB852UB , 2SB853 .

 

 
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