All Transistors. 2SB849A Datasheet

 

2SB849A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB849A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 130 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Collector Capacitance (Cc): 340 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO218

 2SB849A Transistor Equivalent Substitute - Cross-Reference Search

   

2SB849A Datasheet (PDF)

 ..1. Size:105K  inchange semiconductor
2sb849a.pdf

2SB849A
2SB849A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION With TO-3PFa package Complement to type 2SD1110A Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU

 8.1. Size:152K  jmnic
2sb849.pdf

2SB849A
2SB849A

JMnic Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

 8.2. Size:122K  inchange semiconductor
2sb849.pdf

2SB849A
2SB849A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

 9.1. Size:192K  inchange semiconductor
2sb848.pdf

2SB849A
2SB849A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB848DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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